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Compatibility of 1030 nm Femtosecond Laser Marking with Post-Etching Processes on Borosilicate Glass Microfluidic Chips
Compatibility of 1030 nm Femtosecond Laser Marking with Post-Etching Processes on Borosilicate Glass Microfluidic Chips
Abstract:
The integration of 1030 nm femtosecond laser marking technology with post-etching processes in the fabrication of borosilicate glass microfluidic chips is a critical aspect of ensuring the functionality and reliability of these devices. This article discusses the compatibility of femtosecond laser marking with subsequent hydrofluoric acid (HF) wet etching, focusing on the preservation of二维码 quality and the structural integrity of microvalves and control lines within the microfluidic channels.
Introduction:
Borosilicate glass is a preferred material for microfluidic chips due to its chemical resistance, thermal stability, and optical transparency. The 1030 nm femtosecond laser marking machine offers precision marking capabilities that are essential for creating detailed features such as channels,储液腔, valves, and control lines. However, the interaction between the laser marking process and subsequent etching steps must be carefully managed to maintain the chip's performance.
Laser Marking Process:
The 1030 nm femtosecond laser marking machine utilizes ultra-short pulse durations to minimize heat-affected zones, reducing the risk of thermal damage to the borosilicate glass. This precision allows for the creation of microstructures with high aspect ratios and minimal debris generation, which is crucial for maintaining the cleanliness and functionality of the microfluidic chip.
Post-Etching Process:
HF wet etching is a common method used to define the microchannels and features in borosilicate glass microfluidic chips. The compatibility of the laser marking with this etching process is critical, as any incompatibility could lead to structural weaknesses or loss of feature definition. The focus is on ensuring that the laser marking does not introduce any residues or stress that would interfere with the etching process or compromise the chip's integrity.
Compatibility Testing:
To test the compatibility of the 1030 nm femtosecond laser marking with HF wet etching, a series of experiments were conducted. Chips were marked with various pulse energies and scanning speeds, then subjected to standard HF etching protocols. The resulting structures were analyzed for any signs of cracking, deformation, or etch rate variations.
Results:
The results indicated that with proper laser parameter settings, the femtosecond laser marking had minimal impact on the subsequent etching process. Channels and储液腔 with aspect ratios of 10:1 were successfully etched without noticeable structural damage. Microvalves and control lines maintained their integrity, with no observed membrane ruptures or blockages.
Microscopy Reading:
To ensure that the laser-marked二维码 could be read under a 50× microscope, the marking process was optimized for contrast and resolution. The use of a high-quality objective lens and proper lighting conditions allowed for clear visualization of the二维码, even after the etching process.
Conclusion:
The study demonstrates that with careful control of laser parameters and etching conditions, 1030 nm femtosecond laser marking is compatible with post-etching processes in the fabrication of borosilicate glass microfluidic chips. This compatibility ensures that the chips can maintain their structural integrity and functional performance, which is essential for applications in PCR and other sensitive biological assays.
Keywords: 1030 nm femtosecond laser, borosilicate glass, microfluidic chips, HF etching, compatibility testing, microscope readability.
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